Nowadays, IC technologyreaches 45nm node. Complex nano-technologies such as sub-wavelength lithographyand Chemical-Mechanical Polishing (CMP) cause more and more large processvariations and therefore seriously deteriorate the yield.
如今,集成电路工艺到达45nm节点,随着亚波长光刻和化学机械抛光等复杂纳米工艺的普遍采用,越来越严重的工艺参数偏差造成了集成电路成品率的快速恶化。